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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD718 DESCRIPTION With TO-3P(I) package Complement to type 2SB688 APPLICATIONS Power amplifier applications Recommend for 45~50W audio frequency amplifier output stage PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3P(I)) and symbol DESCRIPTION Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC IB PT Tj Tstg PARAMETER TOR NDU ICO E SEM ANG INCH CONDITIONS VALUE 120 Collector-base voltage Open emitter Collector-emitter voltage Open base 120 5 Emitter-base voltage Open collector Collector current Base current Total power dissipation Junction temperature Storage temperature TC=25ae 8 0.8 80 150 -55~150 UNIT V V V A A W ae ae Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Base-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Output capacitance CONDITIONS IC=50mA ,IB=0 IC=5A; IB=0.5A IC=5A ; VCE=5V VCB=120V; IE=0 VEB=5V; IC=0 IC=1A ; VCE=5V IC=1A ; VCE=5V IE=0 ; VCB=10V ;f=1MHz 55 12 170 MIN 120 TYP. 2SD718 SYMBOL V(BR)CEO VCEsat VBE ICBO IEBO hFE fT Cob MAX UNIT V 2.5 1.5 10 10 160 |I |I V V A A MHz pF hFE Classifications R 55-110 O TOR NDU ICO E SEM ANG INCH 80-160 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD718 TOR NDU ICO E SEM ANG INCH Fig.2 Outline dimensions(unindicated tolerance:A 0.10 mm) 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD718 TOR NDU ICO E SEM ANG INCH 4 |
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